PJSD05CFN2 Datasheet | PanJit Semiconductor

BI-DIRECTIONAL TVS This bi-directional TVS has been designed to protect sensitive equipment against ESD and to prevent Latch-Up events in CMOS circuitry operating at 5Vdc and below.This offers an integrated solution to protect a single data line where the board space is a premium. SPECIFICATION FEA TURES - 200W Power Dissipation (8/20s Waveform) - Low Leakage Current, Maximum of 1 A@5Vdc - Very low Clamping voltage - IEC 61000-4-2 ESD 15k V air, 8k V Contact pliance - In pliance with EU Ro HS 2002/95/EC directives - Terminals : Solderable per MIL-STD-750, Method 2026 - Case : DFN 2L, Plastic - Marking : BT 2 7 5 4 DFN 2L Unit : inch(mm) APPLICATIONS - Video I/O ports protection - Set Top Boxes - Portable Instrumentation 2 47 5 4 3 2 0.008(0.22) MAX. PIN NO.1 IDENTIFICATION MAXIMUM RA TINGS Rating Peak Pulse Power (8/20 s Waveform) Maximum Peak Pulse Current (8/20 s Waveform) ESD Voltage (HBM) Op e ra ti ng J unc ti o n a nd S to r a g e Te m p e r a ture R a ng e Symbol Value 200 18 >25 -55 to +150 Units W A k V PPP I PPM VESD T J ,T S TG ELECTRICAL CHARACTERISTICS (T A=25o C) Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Symbol VWRM VBR IR VC VC CJ CJ I BR =1m A VR=5V I PP =5A I PP =15A 0 Vdc Bias f=1MHz 5 Vdc Bias f=1MHz Conditions Min. 6 Typ. Max. 5.0 1.0 11 14 70 60 Units V V A V V p F p F .. Clamping Voltage (8/20s) Clamping Voltage (8/20s) Off State Junction Capacitance Off State Junction Capacitance PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE REV.0.5-AUG.11.2009 PAGE . 1 TYPICAL CHARACTERISTICS 100 90 Per cen t of I pp 80 70 60 50 40 30 20 10 50% of I pp@20 m s...