PJSD05CTS Datasheet | PanJit Semiconductor

FEATURES - 100W Power Dippsipation (8/20µs Waveform) - Low Leakage Current,Maximum of 0.5µA@5Vdc - Very low Clamping voltage - IEC 61000-4-2 ESD 15k V air, 8k V Contact pliance - In pliance with EU Ro HS 2002/95/EC directivess APPLICATIONS - Video I/O ports protection - Set Top Boxes - Portable Instrumentation - Case : SOD-523 plastic - Terminals : Solderable per MIL-STD-750,Method 2026 - Approx Weight : 0.0014 grams - Marking : RS Fig.130 MAXIMUM RATINGS Rating Peak Pulse Power (8/20 µs Waveform) Peak Pulse Current (8/20 µs Waveform) ESD Voltage (HBM) O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e Symbol Value 100 5.0 >25 -55 to 150 Units W A k V PPP I PP V ESD T J , T S TG ELECTRICAL CHARACTERISTICS (TA=25o C) Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Symbol VWRM VBR IR VC VC CJ CJ I BR=1m A VR=3.5V I PP=1A I PP=4A 0 Vdc Bias f=1MHz 5 Vdc Bias f=1MHz Conditions Min. 5.78 Typ. Max. 5.0 7.82 0.5 12 15 30 25 Units V V µA V V p F p F .. Reverse Leakage Current Clamping Voltage (8/20µs) Clamping Voltage (8/20µs) Off State Junction Capacitance Off State Junction Capacitance REV.0.4-FEB.25.2009 PAGE . 1 TYPICAL CHARACTERISTICS 30 29 28 27 26 25 24 23 22 .. REV.0.4-FEB.25.2009 PAGE ....