PJSD05CW Datasheet | PanJit Semiconductor

FEATURES - Transient protection for data lines to .054(1.35) .045(1.15) IEC 61000-4-2 (ESD) + 15k V (air),+ 8k V (contact) IEC 61000-4-5 (Lightning) 24A (8/20µs) - Small package for use in portable electronics - Suitable replacement for MLV’s in ESD protection applications .078(1.95) .068(1.75) .014(.35) .009(.25) .006(.15) - Low clamping voltage - Solid-state silicon avalanche technolngy - In pliance with EU Ro HS 2002/95/EC directives .107(2.7) .090(2.3) MECHANICAL DATA Case : SOD-323, Plastic Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0041 grams Marking Code : P J S D 0 5 C W = E ZB P J S D 1 5 C W = E ZE P J S D 0 8 C W = E ZC P J S D 2 4 C W = E ZF P J S D 1 2 C W = E ZD P J S D 3 6 C W = E ZG .012(.30)MIN. ABSOLUTE MAXIMUM RATINGS PARAMETER Peak Pulse Power (t P=8/20 µs) Lead Soldering Temperature Operating Temperature Storage Temperature .. SYMBOL PPK TL TJ TSTG VALUE 350 260(10 sec.) -55 to +125 -55 to +150 UNITS Watts o .002(.05) - Protects one I/O or power line .038(.95) .027(.70) C C C o o Fig.130 REV.0.2-APR.2.2009 PAGE . 1 PJSD05CW SERIES ELECTRICAL CHARACTERISTICS P JS D 0 5 C W Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage Clamping Voltage Junction Capacitance P JS D 1 2 C W Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage Clamping Voltage Junction Capacitance P JS D 1 5 C W Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage Clamping Voltage Junction Capacitance P JS D 2 4 C W Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage Clamping Voltage Junction Capacitance P JS D 3 6 C W Parameter Symbol VRWM V BR IR VC VC CJ Conditions I t=1m A VRWM=36V, T=25 C I PP=1A, t p=8/20µs I PP=3A, t p=8/20µs VR=0V, f=1MHz o Symbol VRWM V BR IR VC VC CJ Conditions I t=1m A VRWM=5V, T=25 C I PP=5A, t p=8/20µs...