PJSD05FN2 Datasheet | PanJit Semiconductor

FEATURES - Small package for use in portable electronics - IEC61000-4-2 8KV contact 15KV Air pliant - Low clamping voltage and leakage current - In pliance with EU Ro HS 2002/95/EC directives 0.026(0.65) 0.021(0.55) 5 Volts POWER 200 Watts 0.042(1.05) 0.037(0.95) - 200 Watts peak pules power( tp=8/20μs) APPLICATIONS - Case: DFN 2L plastic - Terminals : Solderable per MIL-STD-750, Method 2026 - Polarity : Color band cathode - Marking : BA - Video I/O ports protection - Set Top Boxes - Portable Instrumentation 1 Cathode 2 Anode 0.022(0.55) 0.017(0.45) 0.002(0.05)MAX. 0.013(0.32) 0.008(0.22) PIN NO.1 IDENTIFICATION MAXIMUM RATINGS ABSOLUTE MAXIMUM RATING Rating Peak Pulse Power (tp=8/20 μs) Maximum Peak Pulse Current ESD Voltage per HBM MIL-STD-883 Operating Junction and Storage Temperature Range Symbol PPP I PPM V ESD TJ,TSTG Value 200 18 25 -50 to +150 0.022(0.55) 0.047(0.45) Units W A KV ELECTRICAL CHARACTERISTICS Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Symbol VRWM VBR IR VC VC CJ CJ Conditions I BR=1m A VR=5V I PP=5A I PP=15A 0Vdc Bias=f=1MHz 5Vdc Bias=f=1MHz Min. 6.0 Typical Max. 5 7.2 1 11 14 160 80 Units V V μA V V p F p F .. Clamping Voltage(8/20μs) Clamping Voltage(8/20μs) Off State Junction Capacitance Off State Junction Capacitance PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE January 11,2011-REV.01 PAGE . 1 110 100 90...