PJSD05LCFN2 Datasheet | PanJit Semiconductor

BI-DIRECTIONAL ESD PROTECTION DIODE This bi-directional TVS has been designed to protect sensitive equipment against ESD and to prevent Latch-Up events in CMOS circuitry operating at 5Vdc and below.This offers an integrated solution to protect a single data line where the board space is a premium. SPECIFICATION FEA TURES - 40W Power Dippsipation (8/20s Waveform) - Low Leakage Current, Maximum of 1 A@5Vdc - Very low Clamping voltage - IEC 61000-4-2 ESD 15k V air, 8k V Contact pliance - In pliance with EU Ro HS 2002/95/EC directivess - Terminals : Solderable per MIL-STD-750, Method 2026 - Marking : BY 2 7 5 4 DFN 2L Unit : inch(mm) - Case : DFN 2L, Plastic MAX. APPLICATIONS - Video I/O ports protection - Set Top Boxes - Portable Instrumentation 3 2 0.008(0.22) PIN NO.1 IDENTIFICATION MAXIMUM RA TINGS Rating Peak Pulse Power (8/20 s Waveform) Peak Pulse Current (8/20 s Waveform) ESD Voltage (HBM) Op e ra t i ng J unc t i o n a nd S to r a g e Te mp e r a tur e Ra ng e Symbol Value 40 4 >25 -55 to +150 2 47 5 4 Units W A k V PPP I PPM VESD T J ,T S TG ELECTRICAL CHARACTERISTICS (T A=25o C) Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Symbol VWRM V BR IR VC CJ Conditions Min. - Typ. - Max. 5.0 7.82 1.0 10 15 Units V V A V p...