PJSMDA15-6 Datasheet | PanJit Semiconductor

FEATURES 1 8 7 GND 6 GND 5 SOIC-8 350W Power Dissipation (8x20µsec Waveform) Low Leakage Current, Maximum of 5µA at rated voltage Very Low Clamping Voltage IEC61000-4-2 ESD 20k V air, 15k V Contact pliance Packaged in the Industry Standard SOIC-8 2 3 4 APPLICATIONS RS-232C or RS-422 munication ports GPIB/IEEE 485 Ports Portable Instrumentation 8 5 MAXIMUM RATINGS (Per Device) Rating Peak Pulse Power (8x20µsec Waveform) ESD Voltage (HBM) Operating Temperature Range Storage Temperature Range Symbol P pp V ESD TJ Tstg Value 350 >25 -50 to +125 -50 to +150 Units W k V °C °C ELECTRICAL CHARACTERISTICS (Per Device) Tj = 25°C PJSMDA05-6 Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8x20µsec) Clamping Voltage (8x20µsec) Off State Junction Capacitance Off State Junction Capacitance Symbol VWRM VBR IR Vcl Vcl Cj Cj I BR = 1m A VR = 5V I pp = 5A I pp = 24A 0 Vdc Bias f = 1MHz Between I/O pins and pin 6, 7 5 Vdc Bias f = 1MHz Between I/O pins and pin 6, 7 Conditions Min Typical Max 5 Units V V 6 5 9.8 13 225 125 µA V V p F p F 4/19/2005 Page .panjit. PJSMDA05-6 SERIES ELECTRICAL CHARACTERISTICS (Per Device) Tj = 25°C PJSMDA12-6 Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8x20µsec) .. Clamping Voltage (8x20µsec) Symbol VWRM VBR IR Vcl Vcl Cj Conditions Min Typical Max 12 Units V V I BR = 1m A VR = 12V I pp = 5A I pp =...