PJSMDA15C Datasheet | PanJit Semiconductor

FEATURES 350W Power Dissipation (8/20µs Waveform) Low Leakage Current, Maximum of 5µA at rated voltage Very Low Clamping Voltage .. PJSMDA05 Series IEC61000-4-2 ESD 20k V air, 15k V Contact pliance Packaged in the Industry Standard SOIC-8 Unidirectional and Bi-directional Protection Options 100% Tin Matte Finish (Ro HS pliant) APPLICATIONS RS-232C or RS-422 munication ports GPIB/IEEE 485 Ports Portable Instrumentation PJSMDA05C Series MAXIMUM RATINGS (Per Device) Rating Peak Pulse Power (8/20µs Waveform) ESD Voltage (HBM) Per MIL-STD-883C Operating Temperature Range Storage Temperature Range Symbol P pp V ESD TJ Tstg Value 350 >25 -50 to +125 -50 to +150 Units W k V °C °C ELECTRICAL CHARACTERISTICS (Per Device) Tj = 25°C PJSMDA05, 05C Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8/20µs) Clamping Voltage (8/20µs) Off State Junction Capacitance- Off State Junction Capacitance- Symbol VWRM VBR IR Vc Vc Cj Cj I BR = 1m A VR = 5V I pp = 5A I pp = 24A 0 Vdc Bias f = 1MHz 5 Vdc Bias f = 1MHz Conditions Min Typical Max 5 Units V V 6 5 9.5 13 200 110 µA V V p F p F - Note: Off-state capacitance in the bi-directional version is half of the value shown for the unidirectional. 1/23/2006 Page 1 .panjit. PJSMDA05, 05C SERIES ELECTRICAL CHARACTERISTICS (Per Device) Tj = 25°C PJSMDA12, 12C Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8/20µs) .. Clamping Voltage (8/20µs) Symbol VWRM VBR IR Vc Vc Cj Conditions Min Typical Max 12 Units V V I BR = 1m A VR = 12V I pp = 5A I pp =...