PJSR12 Datasheet | PanJit Semiconductor

FEATURES Peak Power Dissipation of 500W 8/20µs Maximum .. Capacitance of 5.0p F at 0Vdc 1MHz Line-to-Ground I/O2 3 I/O1 Maximum Leakage Current of 1µA @ VRWM Industry Standard SMT Package SOT143 IEC61000-4-2, IEC61000-4-4 and IEC61000-4-5 Full pliance 100% Tin Matte finish (LEAD-FREE PRODUCT) VREF 4 1 GND APPLICATIONS RS422 Interface LAN/WLAN Access Point terminals Industrial control munication ports I 2C Bus Protection SOT143 Marking Code: S12 MAXIMUM RATINGS Tj = 25°C Unless otherwise noted Rating Peak Pulse Power (8/20µs Waveform) Peak Pulse Current (8/20µs Waveform) Operating Junction Temperature Range Storage Temperature Range Soldering Temperature, t max = 10s Symbol P PPM I PP TJ Tstg TL Value 500 16 -55 to +125 -55 to +150 260 Units W A °C °C °C 10/6/2006 Page 1 .panjit. ELECTRICAL CHARACTERISTICS Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8/20µs) Clamping Voltage (8/20µs) Clamping Voltage (8/20µs) Off State Junction Capacitance .. Symbol VWRM VBR IR Vc Vc Vc Cj I BR = 1m A VR = 12V I pp = 5A I pp = 10A I pp = 16A 0 Vdc Bias f = 1MHz Between I/O pins and GND 0 Vdc Bias f = 1MHz Between I/O pins Tj = 25°C unless otherwise noted Conditions Min Typical Max 12 13.3 1 22 27 31 3.8 1.4 5 3 Units V V µA V V V p F p F TYPICAL CHARACTERISTIC CURVES Surge Pulse Waveform Definition Pulse Waveform 110 100 90 80 70 60 50 40 30 20 10 0 0 Maximum Clamping Voltage vs Ipp 8/20µs Clamping voltage, V Percent of Ipp 50% of Ipp @ 20µs Rise time 10-90% - 8µs 5 10 15 tim e, µsec 20 25...