PJSRV05-4
PJSRV05-4 is Low Capacitance TVS and Diode Array manufactured by PanJit Semiconductor.
FEATURES
Peak Power Dissipation of 350W 8/20µs Maximum Capacitance of 3.0p F at 0Vdc 1MHz Line-to-Ground Maximum Leakage Current of 0.1µA @ VRWM Industry Standard SMT Package SOT23-6L IEC61000-4-2, IEC61000-4-4 and IEC61000-4-5 Full pliance 100% Tin Matte finish (LEAD-FREE PRODUCT)
I/O4 REF1 I/O3
I/O2
REF2
I/O1
SOT23-6L
APPLICATIONS
USB 2.0 and Firewire Port Protection LAN/WLAN Access Point terminals Video Signal line protection I 2C Bus Protection
MAXIMUM RATINGS Tj = 25°C Unless otherwise noted
Rating Peak Pulse Power (8/20µs Waveform) Peak Pulse Current (8/20µs Waveform) Operating Junction Temperature Range Storage Temperature Range Soldering Temperature, t max = 10s Symbol P PPM I PP TJ Tstg TL Value 350 17.5 -55 to +150 -55 to +150 260 Units W A °C °C °C
12/1/2005
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ELECTRICAL CHARACTERISTICS
Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8/20µs) Clamping Voltage (8/20µs) Clamping Voltage (8/20µs) Off State Junction Capacitance Symbol VWRM VBR IR Vc Vc Vc Cj I BR = 1m A VR = 5V I pp = 1 A I pp = 10 A I pp = 17.5 A
0 Vdc Bias f = 1MHz Between I/O pins and GND 0 Vdc Bias f = 1MHz Between I/O pins
Tj = 25°C unless otherwise noted
Conditions Min Typical Max 5 6.2 0.1 9.5 12 20 3 2 Units V V µA V V V p F p F
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DRAFT SPEC
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PACKAGE DIMENSIONS AND SUGGESTED PAD LAYOUT
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DRAFT SPEC
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