• Part: PJSRV05-4
  • Description: Low Capacitance TVS and Diode Array
  • Category: Diode
  • Manufacturer: PanJit Semiconductor
  • Size: 97.75 KB
Download PJSRV05-4 Datasheet PDF
PanJit Semiconductor
PJSRV05-4
PJSRV05-4 is Low Capacitance TVS and Diode Array manufactured by PanJit Semiconductor.
FEATURES Peak Power Dissipation of 350W 8/20µs Maximum Capacitance of 3.0p F at 0Vdc 1MHz Line-to-Ground Maximum Leakage Current of 0.1µA @ VRWM Industry Standard SMT Package SOT23-6L IEC61000-4-2, IEC61000-4-4 and IEC61000-4-5 Full pliance 100% Tin Matte finish (LEAD-FREE PRODUCT) I/O4 REF1 I/O3 I/O2 REF2 I/O1 SOT23-6L APPLICATIONS USB 2.0 and Firewire Port Protection LAN/WLAN Access Point terminals Video Signal line protection I 2C Bus Protection MAXIMUM RATINGS Tj = 25°C Unless otherwise noted Rating Peak Pulse Power (8/20µs Waveform) Peak Pulse Current (8/20µs Waveform) Operating Junction Temperature Range Storage Temperature Range Soldering Temperature, t max = 10s Symbol P PPM I PP TJ Tstg TL Value 350 17.5 -55 to +150 -55 to +150 260 Units W A °C °C °C 12/1/2005 Page 1 .panjit. ELECTRICAL CHARACTERISTICS Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8/20µs) Clamping Voltage (8/20µs) Clamping Voltage (8/20µs) Off State Junction Capacitance Symbol VWRM VBR IR Vc Vc Vc Cj I BR = 1m A VR = 5V I pp = 1 A I pp = 10 A I pp = 17.5 A 0 Vdc Bias f = 1MHz Between I/O pins and GND 0 Vdc Bias f = 1MHz Between I/O pins Tj = 25°C unless otherwise noted Conditions Min Typical Max 5 6.2 0.1 9.5 12 20 3 2 Units V V µA V V V p F p F .. DRAFT SPEC 12/1/2005 Page 2 .panjit. PACKAGE DIMENSIONS AND SUGGESTED PAD LAYOUT .. DRAFT SPEC 12/1/2005 Page...