PJT7600 Datasheet | PanJit Semiconductor

Features Application - Advanced Trench Process Technology - Specially Designed for Switch Load, PWM Application, etc. - ESD Protected - Lead free in ply with EU Ro HS 2011/65/EU directives. - Green molding pound as per IEC61249 Std. (Halogen Free) Mechanical Data - Case: SOT-363 Package - Terminals: Solderable per MIL-STD-750, Method 2026 - Approx. Weight: 0.0002 ounces, 0.006 grams - Marking: T60 Unit: inch(mm) Maximum Ratings and Thermal Characteristics (TA=25o C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 4) Power Dissipation Ta=25o C Derate above 25o C Operating Junction and Storage Temperature Range Thermal resistance - Junction to Ambient (Note 3) SYMBOL VDS VGS ID IDM TJ,TSTG N-Ch LIMIT P-Ch LIMIT 20 -20 +8 +8 1 -0.7 4 -2.8 350 2.8 -55~150 RθJA UNITS V V A A m W m W/ o C o C o C/W August 16,2013-REV.00 Page 1 PPJT7600 N-Channel Electrical Characteristics (TA=25o C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current Diode Forward...