PJT7802 Datasheet | PanJit Semiconductor

Features - RDS(ON) , VGS@4.5V, ID@0.5A<0.4Ω - RDS(ON) , VGS@2.5V, ID@0.3A<0.7Ω - RDS(ON) , VGS@1.8V, ID@0.1A<1.2Ω(typ.) - Advanced Trench Process Technology - Specially Designed for Switch Load, PWM Application, etc. - ESD Protected - Lead free in pliance with EU Ro HS 2011/65/EU directive. - Green molding pound as per IEC61249 Std.(Halogen Free) Mechanical Data - Case : SOT-363 Package - Terminals : Solderable per MIL-STD-750, Method 2026 - Approx. Weight : 0.0002 ounces, 0.006 grams - Marking : T02 Unit: inch(mm) Maximum Ratings and Thermal Characteristics (TA=25o C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 4) Power Dissipation Ta=25o C Derate above 25o C Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Ambient (Note 3) SYMBOL VDS VGS ID IDM TJ,TSTG RθJA LIMIT 20 +12 0.5 2.0 350 2.8 -55~150 UNITS V V A A m W m W/ o C o C o C/W September 10,2014-REV.01 Page 1 PPJT7802 Electrical Characteristics (TA=25o C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 5) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Diode Maximum Continuous Drain-Source Diode Forward...