PJW2P10A
PJW2P10A is 100V P-Channel Enhancement Mode MOSFET manufactured by PanJit Semiconductor.
Features
- RDS(ON), VGS@-10V,ID@-1.5A<650mΩ
- RDS(ON), VGS@-4.5V,ID@-1.0 A<700mΩ
- High switching speed
- Improved dv/dt capability
- Low Gate Charge
- Low reverse transfer capacitance
- Lead free in pliance with EU Ro HS 2011/65/EU directive.
- Green molding pound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
- Case : SOT-223 Package
- Terminals : Solderable per MIL-STD-750, Method 2026
- Approx. Weight : 0.043 ounces, 0.123 grams
- Marking: W2P10A
Maximum
Ratings and
Thermal
Characteristics o
(TA=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25o C
TA=70o C
Pulsed Drain Current (Note 1)
Power Dissipation
TA=25o C TA=70o C
Single Pulse Avalanche Energy (Note 5)
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 6)
SYMBOL VDS VGS ID IDM PD EAS
TJ,TSTG
RθJA
- Limited only By Maximum Junction Temperature
LIMIT -100 +20 -1.5 -1.2
-6 3.1 2 0.2...