PJW3N10A
PJW3N10A is 100V N-Channel MOSFET manufactured by PanJit Semiconductor.
Features
- RDS(ON), VGS@10V,ID@2.2A<310mΩ
- RDS(ON), VGS@4.5V,ID@1A<320mΩ
- Low On-Resistance
- Low input capacitance
- Lead free in pliance with EU Ro HS 2011/65/EU directive
- Green molding pound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
- Case : SOT-223 Package
- Terminals : Solderable per MIL-STD-750, Method 2026
- Approx. Weight : 0.043 ounces, 0.123 grams
- Marking: W3N10A
Maximum
Ratings and
Thermal
Characteristics o
(TA=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current
Pulsed Drain Current (Note 1) Power Dissipation
TA=25o C TA=70o C
TA=25o C TA=70o C
SYMBOL VDS VGS
Operating Junction and Storage Temperature Range TJ,TSTG
Typical Thermal resistance
- Junction to Ambient, t≦10s (Note 5)
RθJA
LIMIT 100 +20 2.2 1.7 4.4 3.1 2.0
-55~150
- Limited only By Maximum Junction Temperature
UNITS V V A A W o C o C/W
July 7,2015-REV.00
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