PJW4N10 Datasheet | PanJit Semiconductor

Features - RDS(ON), VGS@10V,ID@2A<258mΩ - RDS(ON), VGS@6V,ID@1A<268mΩ - Low On-Resistance - Low input capacitance - Lead free in pliance with EU Ro HS 2011/65/EU directive - Green molding pound as per IEC61249 Std. (Halogen Free) Mechanical Data - Case : SOT-223 Package - Terminals : Solderable per MIL-STD-750, Method 2026 - Approx. Weight : 0.043 ounces, 0.123 grams - Marking: W4N10 Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note 1) Power Dissipation Continuous Drain Current Power Dissipation Power Dissipation TC=25o C TC=100o C TC=25o C TC=25o C TC=100o C TA=25o C TA=70o C TA=25o C TA=70o C Operating Junction and Storage Temperature Range Typical Thermal resistance(Note 4,5) Junction to Case Junction to Ambient - Limited only By Maximum Junction Temperature SYMBOL VDS VGS ID IDM PD PD TJ,TSTG RθJC RθJA LIMIT 100 +20 4 2.5 8 8 3.2 2.5 2 3.1 2 -55~150 15.6 40.3 UNITS V V W A A W o C o C/W July...