PJX8806 Datasheet | PanJit Semiconductor

Features - - - - - - - - 20 V Current 800m A SOT-563 Unit : inch(mm) RDS(ON), VGS@4.5V,IDS@500m A=0.4Ω RDS(ON), VGS@2.5V,IDS@300m A=0.7Ω RDS(ON), VGS@1.8V,IDS@100m A=1.2Ω(typ) Advanced Trench Process Technology Specially Designed for Load Switch or PWM application. ESD Protected Lead free in ply with EU Ro HS 2011/65/EU directives. Green molding pound as per IEC61249 Std. (Halogen Free) Mechanical Data - - - - Case: SOT-563 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.00009 ounces, 0.0026 grams Marking: X06 http://..net/ Maximum Ratings and Thermal Characteristics (TA=25 C unless otherwise noted) o PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation TA=25 C Derate above 25 C o o SYMBOL VDS VGS ID IDM PD TJ,TSTG RθJA LIMIT UNITS V V m A m A m W m W/ o C o 20 +12 800 3000 350 2.8 -55~150 357 o Operating Junction and Storage Temperature Range Thermal resistance Junction to Ambient (Note 3) C/W April 19,2013-REV.00 Page 1 datasheet pdf - http://..net/ PPJX8806 Electrical Characteristics (TA=25 C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current Diode Forward Voltage IS VSD --IS=500m A, VGS=0V 0.91 500 1.3 m A V td(on) tr td(off) tf VDD=10V, ID=500m A, VGS=4.5V, RG=6Ω (Note 1,2) o SYMBOL BVDSS VGS(th) RDS(on) IDSS IGSS Qg Qgs Qgd Ciss Coss Crss TEST CONDITION VGS=0V,ID=250u A VDS=VGS,ID=250u A VGS=4.5V,ID=500m A VGS=2.5V,ID=300m A VGS=1.8V,ID=100m A VDS=16V,VGS=0V VGS=+10V,VDS=0V MIN. 20 0.4 - TYP. 0.7 0.35 0.6 1.2 0.02 +2 0.92 0.31 0.08 50 10 8.5 4...