Download PJZ18NA50 Datasheet PDF
PanJit Semiconductor
PJZ18NA50
PJZ18NA50 is 500V N-Channel MOSFET manufactured by PanJit Semiconductor.
Features - RDS(ON), VGS@10V,ID@9A<0.35Ω - High switching speed - Improved dv/dt capability - Low Gate Charge - Low reverse transfer capacitance - Lead free in pliance with EU Ro HS 2011/65/EU directive. Mechanical Data - Case: TO-3PL Package - Terminals : Solderable per MIL-STD-750, Method 2026 - TO-3PL Approx. Weight : 0.182 ounces, 5.174grams TO-3PL Maximum Ratings and Thermal Characteristics (TA=25o C unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Avalanche Energy (Note 1) Power Dissipation TC=25o C Derate above 25o C VDS VGS ID IDM EAS Operating Junction and Storage Temperature Range TJ,TSTG Typical Thermal resistance - Junction to Case - Junction to Ambient RθJC RθJA - Limited only By Maximum Junction Temperature TO-3PL 500 +30 18 72 1502 240 1.92 -55~150 0.52 50 UNITS V V A A m J W W/ o C o C o C/W March 10,2014-REV.00 Page 1 PPJZ18NA50 Electrical Characteristics (TA=25o C unless otherwise...