PJZ18NA50
PJZ18NA50 is 500V N-Channel MOSFET manufactured by PanJit Semiconductor.
Features
- RDS(ON), VGS@10V,ID@9A<0.35Ω
- High switching speed
- Improved dv/dt capability
- Low Gate Charge
- Low reverse transfer capacitance
- Lead free in pliance with EU Ro HS 2011/65/EU directive.
Mechanical Data
- Case: TO-3PL Package
- Terminals : Solderable per MIL-STD-750, Method 2026
- TO-3PL Approx. Weight : 0.182 ounces, 5.174grams
TO-3PL
Maximum Ratings and Thermal Characteristics (TA=25o C unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy (Note 1)
Power Dissipation
TC=25o C Derate above 25o C
VDS VGS ID IDM EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Typical Thermal resistance
- Junction to Case
- Junction to Ambient
RθJC RθJA
- Limited only By Maximum Junction Temperature
TO-3PL 500 +30 18 72 1502 240 1.92
-55~150
0.52 50
UNITS V V A A m J W
W/ o C o C o C/W
March 10,2014-REV.00
Page 1
PPJZ18NA50
Electrical Characteristics (TA=25o C unless otherwise...