SB30100LYT Datasheet | PanJit Semiconductor

FEATURES - Low forward voltage drop, low power losses - High efficiency operation - Lead free in ply with EU Ro HS 2011/65/EU directives MECHANICAL DATA - Case : TO-220AB, Plastic - Terminals : Solderable per MIL-STD-750, Method 2026 - Weight : 0.0655 ounces, 1.859 grams MAXIMUM RATINGS ( TA=25 o C unless otherwise noted ) PARAMETER Maximum repetitive peak reverse voltage SYMBOL VRRM Maximum average forward rectified current (Fig.1) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load per diode Typical thermal resistance Operating junction I F(AV) I FSM RθJc Storage temperature range TSTG VALUE 100 30 15 275 -55 to + 150 -55 to + 150 UNIT V A A OC / W o C o C ELECTRICAL CHARACTERISTICS ( TA=25 o C unless otherwise noted ) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. Breakdown voltage VBR I R=1.0m A 103 120 Instantaneous forward voltage per diode ( Note 1 ) I F=5A VF I F=15A I F=30A - 0.50 0.71 - Reverse current per diode ( Note 2 ) VR=70V IR VR=100V - 10 -- Notes : 1 Pulse test : 380μs pulse width, 1% duty cycle 2. Pulse test : Pulse width <...