SBM2060VCT Datasheet | PanJit Semiconductor

FEATURES - Low forward voltage drop, low power losses - High efficiency operation - Lead free in ply with EU Ro HS 2011/65/EU directives 60 Volts CURRENT 20 Amperes MECHANICAL DATA Case : TO-220AB, Plastic Terminals : Solderable per MIL-STD-750, Method 2026 Weight : 0.0655 ounces, 1.859 grams. http://..net/ MAXIMUM RATINGS(TA=25o C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum rms voltage Maximum dc blocking voltage Maximum average forward rectified current Peak forward surge current : 8.3ms single half sine-wave superimposed on rated load Typical junction capacitance (V R=4V, f=1MHz) Typical thermal resistance per diode Operating junction temperature range Storage temperature range ( No te 1 ) per device per diode per diode SYMBOL VRRM VRMS VR I F(AV) I FSM CJ R JC TJ TSTG VALUE 60 42 60 20 10 150 480 1.5 -55 to + 150 -55 to + 150 UNIT V V V A A p F C /W o C C o Note : 1. Mounted on infinite heatsink. May 3,2013-REV.00 PAGE . 1 datasheet pdf - http://..net/ ELECTRICAL CHARACTERISTICS(TA=25o C unless otherwise noted) PARAMETER Breakdown voltage per diode SYMBOL V BR TEST CONDITIONS I R=0.5m A I F=3A I F=5A I F=10A I F=3A I F=5A I F=10A VR=42V TJ=25o C MIN. 60 - TYP. 0.37 0.41 0.51 0.31 0.38 0.53 45 95 20 MAX. 0.57 220 - UNIT V V Instantaneous forward voltage per diode TJ=125o C V A A m A Reverse current per diode IR VR=60V TJ=25o C TJ=125o C - CJ, Junction Capacitance (p F) IF, Forward Current...