SBT10120LFCT Datasheet | PanJit Semiconductor

Features - Ideal for automated placement - Ultra low forward voltage drop, low power loss - High efficiency operation - Low thermal resistance - Lead free in pliance with EU Ro HS 2011/65/EU directive 0.112(2.85) 0.100(2.55) 0.406(10.3) 0.381(9.7) 0.134(3.4) 0.118(3.0) 0.272(6.9) 0.248(6.3) Mechanical Data - Case: Molded plastic, ITO-220AB - Terminals: solder plated, solderable per MIL-STD-750,Method 2026 - Approx. Weight: 0.056 ounces, 1.6 grams - Marking: Part number 0.055(1.4) 0.039(1.0) 0.055(1.4) 0.039(1.0) 0.028(0.7) 0.019(0.5) 0.100(2.55) 0.100(2.55) 0.177(4.5) 0.137(3.5) 0.543(13.8) 0.512(13.0) 0.606(15.4) 0.583(14.8) 0.128(3.25) MIN. 0.189(4.8) 0.165(4.2) 0.130(3.3) 0.114(2.9) 0.114(2.9) 0.098(2.5) 0.027(0.67) 0.022(0.57) Maximum Ratings And Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum rms voltage Maximum dc blocking voltage per diode Maximum average forward rectified current per device Peak forward surge current : 8.3ms single half sine- wave superimposed on rated load per diode Typical thermal resistance per diode (Note 1) Operating junction temperature range Storage temperature range SYMBOL VRRM VRMS...