SBT20150LFCT Datasheet | PanJit Semiconductor

FEATURES - Ultra low forward voltage drop, low power loss - High efficiency operation - Lead free in pliance with EU Ro HS 2011/65/EU directive MECHANICAL DATA Case : ITO-220AB, Plastic Terminals : Solderable per MIL-STD-750, Method 2026 Weight : 0.056 ounces, 1.6 grams. 0.112(2.85) 0.100(2.55) 0.272(6.9) 0.248(6.3) 0.406(10.3) 0.381(9.7) 0.134(3.4) 0.118(3.0) 0.189(4.8) 0.165(4.2) 0.130(3.3) 0 . 11 4 ( 2 . 9 ) 0.128(3.25) MIN. 0.606(15.4) 0.583(14.8) 0.055(1.4) 0.039(1.0) 0.055(1.4) 0.039(1.0) 0.028(0.7) 0.019(0.5) 0.100(2.55) 0.100(2.55) 0.177(4.5) 0.137(3.5) 0.543(13.8) 0.512(13.0) 0 . 11 4 ( 2 . 9 ) 0.098(2.5) 0.027(0.67) 0.022(0.57) MAXIMUM RATINGS(TA=25o C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum rms voltage Maximum dc blocking voltage Maximum average forward rectified current Peak forward surge current : 8.3ms single half sine-wave superimposed on rated load per device per diode Typical thermal resistance (Note 1) Operating junction temperature range Storage temperature range SYMBOL VRRM VRMS VR I F(AV) I FSM R ΘJC TJ TSTG Note : 1. Device mounted on a infinite heatsink. ELECTRICAL CHARACTERISTICS(TA=25o C unless otherwise noted) PARAMETER Breakdown voltage per diode Instantaneous forward voltage per diode Reverse current per diode SYMBOL TEST CONDITIONS VBR I R=0.5m A TJ=25o C I F=1A I F=5A VF I F=10A I F=1A I F=5A TJ=25o C TJ=125o C VR=105V TJ=25o...