SBT30150VPT Datasheet | PanJit Semiconductor

Features - Ideal for automated placement - Ultra low forward voltage drop, low power loss - High efficiency operation - Low thermal resistance - Lead free in pliance with EU Ro HS 2011/65/EU directive 0.640(16.25) 0.620(15.75) 0.142(3.60) 0.125(3.20) Mechanical Data - Case: Molded plastic, TO-3P - Terminals: solder plated, solderable per MIL-STD-750,Method 2026 - Approx. Weight: 0.225 ounces, 6.367 grams - Marking: Part number 0.087(2.20) 0.070(1.80) 0.126(3.20) 0.110(2.80) 0.050(1.25) 0.045(1.15) 0.225(5.70) 0.204(5.20) 0.225(5.70) 0.204(5.20) 0.170(4.30) 0.145(3.70) 0.798(20.25) 0.777(19.75) 0.600(15.25) 0.580(14.75) 0.839(21.30) 0.819(20.80) 0.199(5.05) 0.175(4.45) 0.095(2.40) 0.030(0.75) 0.017(0.45) Maximum Ratings And Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum rms voltage Maximum dc blocking voltage per diode Maximum average forward rectified current per device Peak forward surge current : 8.3ms single half sine- wave superimposed on rated load per diode Typical thermal resistance per diode (Note 1) Operating junction temperature range Storage temperature range SYMBOL VRRM VRMS VR IF(AV) IFSM RθJC TJ...