1E3A Datasheet | PanJit Semiconductor

FEATURES l Superfast recovery times-epitaxial construction l Low forward voltage, high current capability l l l l l Exceeds environmental standards of MIL-S-19500/228 Hermetically sealed Low leakage High surge capability Plastic package has Underwriters Laboratories Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding pound MECHANICAL DATA Case: Molded plastic, R-1 Terminals: Axial leads, solderable to MIL-STD-202, Method 208 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.0064 ounce, 0.181 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ¢J ambient temperature unless otherwise specified. Resistive or inductive load, 60 Hz. Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current .375"(9.5mm) lead length TA=55 ¢J Peak Forward Surge Current IFM(surge): 8.3ms single half sine-wave superimposed on rated load(JEDEC method) Maximum Forward Voltage at 1.0A DC Maximum DC Reverse Current At Rated DC Blocking Voltage Maximum DC Reverse Current at Rated DC Blocking Voltage TA=125 ¢J Maximum Reverse Recovery Time(Note 1) Typical Junction capacitance (Note 2) Operating and Storage Temperature Range TJ NOTES: 1. Reverse Recovery Test Conditions: IF=.5A, IR=1A, Irr=.25A 2. Measured at 1 MHz and applied reverse voltage of 4.0 VDC 1E1 50 35 50 1E2 100 70 100 1E2A 150 105 150 1E3 200 140 200 1.0 30.0 1E3A 300 210 300 1E4 400 320 400 1E5 600 420 600 UNITS V V V A A R-1 .95 5.0 150 35.0 17 -55 to +150 V £g A £g A ns ¢J RATING AND CHARACTERISTIC CURVES 1E1 THRU 1E5 trr +0.5A 0 -0.25 FORWARD SURGE CURRENT, AMPERES pk (HALF SINE WAVE) NOTE:1.Rise Time = 70ns max. Input Impedance = 1 megohm. 22p F 2.Rise Time = 10ns max. Source Impedance = 50 Ohms -1.0 SET TIME BASE FOR 50 ns/cm 1cm 6 8 10 40 60 80 100 NUMBER OF CYCLES AT 60Hz Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM AVERAGE...