BZT52-C6V8S Datasheet | PanJit Semiconductor

FEATURES - Planar Die construction - 200m W Power Dissipation - Zener Voltages from 2.4V - 39V - Ideally Suited for Automated Assembly Processes - 39 Volts POWER 200 m Watts PACKAGE SOD-323 MECHANICAL DATA Case: SOD-323, Plastic Terminals: Solderable per MIL-STD-202, Method 208 Approx. Weight: 0.008 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Parameter Power Dissipation (Notes A) at 25OC Peak Forward Surge Current, 8.3ms single half sine-wave superimposed on rated load (JEDEC method) (Notes B) Operating Junction and Storage Temperature Range Symbol Value 200 2.0 -55 to +150 Units m W Amps PD IFSM TJ NOTES: A. Mounted on 5.0mm2(.013mm thick) land areas. B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum. Part Number: BZT52-C2V4S thru BZT52-C39S PAGE 1 BZT52-C2V4S thru BZT52-C39S ELECTRICAL CHARACTERISTICS (TA=25OC unless otherwise noted) VF=1.2V max, IF=100m A for all types. Nominal Zener Voltage Part Number No m. V Max. Zener Impedance Z ZT @ I ZT Z ZK @ I ZK Ω m A Max Reverse Leakage Current IR @ V R µA V Typical Temp. Coefficient TC V Z @ IZT M i n. V M a x. V P ackag e Ω m A 200 m Watts Zener Diodes BZT52-C2V4S BZT52-C2V7S BZT52-C3S BZT52-C3V3S BZT52-C3V6S BZT52-C3V9S BZT52-C4V3S BZT52-C4V7S BZT52-C5V1S BZT52-C5V6S BZT52-C6V2S BZT52-C6V8S BZT52-C7V5S BZT52-C8V2S BZT52-C9V1S BZT52-C10S BZT52-C11S BZT52-C12S BZT52-C13S BZT52-C15S BZT52-C16S BZT52-C18S BZT52-C20S BZT52-C22S BZT52-C24S BZT52-C27S BZT52-C30S BZT52-C33S BZT52-C36S BZT52-C39S 2.4 2.7 3 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 2.28 2.5 2.8 3.1 3.4 3.7 4 4.4 4.8 5.2 5.8 6.4 7 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28 31 34 37 2.52 2.9 3.2 3.5 3.8 4.1 4.6 5 5.4 6 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32 35 38 41 85 83 95 95 95 95 95 78 60 40 10 8 7 7 10 15 20 20 25 30 40 50 50 55 80 80 80 80 90 90 5 5 5 5...