BZT52-C9V1 Datasheet | PanJit Semiconductor

FEATURES - Planar Die construction - 410m W Power Dissipation - Zener Voltages from 2.4V - 39V - Ideally Suited for Automated Assembly Processes MECHANICAL DATA - Case: SOD-123, Molded Plastic - Terminals: Solderable per MIL-STD-202, Method 208 - Polarity: See Diagram Below - Approx. Weight: 0.008 grams - Mounting Position: Any SOD-123 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Parameter Power Dissipation (Notes A) at 25OC Peak Forward Surge Current, 8.3ms single half sine-wave superimposed on rated load (JEDEC method) (Notes B) Operating Junction and Storage Temperature Range Symbol Value 410 2.0 -55 to +150 Units m W Amps PD IFSM TJ NOTES: A. Mounted on 5.0mm 2(.013mm thick) land areas. B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum. Part Number: BZT52-C2V4 - BZT52-C39 PAGE 1 BZT52-C2 thru BZT52-C39 ELECTRICAL CHARACTERISTICS (TA=25OC unless otherwise noted) VF=1.2V max, IF=100m A for all types. Nominal Zener Voltage @ Iz =5m A Part Number No m. V Dynamic Resistance Impedance Z ZT @ I ZT Z ZK @ I ZK Ω m A Max Reverse Leakage Current IR @ V R n A V Max. Zener Current IZM @ T A m A V Z @ IZT M i n. V M a x. V P ackag e Ω m A BZT52-C2V4 BZT52-C2V7 BZT52-C3 BZT52-C3V3 BZT52-C3V6 BZT52-C3V9 BZT52-C4V3 BZT52-C4V7 BZT52-C5V1 BZT52-C5V6 BZT52-C6V2 BZT52-C6V8 BZT52-C7V5 BZT52-C8V2 BZT52-C9V1 BZT52-C10 BZT52-C11 BZT52-C12 BZT52-C13 BZT52-C15 BZT52-C16 BZT52-C18 BZT52-C20 BZT52-C22 BZT52-C24 BZT52-C27 BZT52-C30 BZT52-C33 BZT52-C36 BZT52-C39 2.4 2.7 3 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 2.28 2.5 2.8 3.1 3.4 3.7 4 4.4 4.8 5.2 5.8 6.4 7 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28 31 34 37 2.56 2.9 3.2 3.5 3.8 4.1 4.6 5 5.4 6 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32 35 38 41 85 83 95 95 95 95 95 78 60 40 10 8 7 7 10 15 20 20 25 30 40 50 50 55 80 80 80 80 90 90 5 5 5 5 5 5 5 5 5 5...