ER3E Datasheet | PanJit Semiconductor

FEATURES - For surface mounted applications .128 (3.25) .108 (2.75) .245 (6.22) .220 (5.59) SMC / DO-214AB Unit: inch ( mm ) - High temperature metallurgically bonded-no pression contacts as found in other diode-constructed rectifiers - Glass passivated junction - Built-in strain relief - Easy pick and place - Plastic package has Underwriters Laboratory Flammability Classification 94V-O - plete device submersible temperature of 260°C for 10 seconds in solder bath .280 (7.11) .260 (6.60) .012 (.305) .006 (.152) .103 (2.62) .079 (2.00) MECHANICAL DATA Case: JEDEC DO-214AB molded plastic Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Indicated by cathode band Standard packaging: 12mm tape (EIA-481) Weight: 0.007 ounce, 0.21 gram .050 (1.27) .030 (0.76) .320 (8.13) .305 (7.75) .008(.203) .002(.051) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. ER3A Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at TL=75°C Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage at 3.0A Maximum DC Reverse Current at Rated DC Blocking Voltage Maximum Reverse Recovery (Note 1) Typical Junction Capacitance (Note 2) Maximum Thermal Resistance(Note 3) RθJA Operating and Storage Temperature Range TJ NOTES:1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Irr=0.25A 2. Measured at 1 MHz and applied Vr = 4.0 volts. 3. 8.0 mm2 ( .013mm thick ) land areas. TA=25°C TA=125°C 0.95 5.0 200 35.0 45.0 16 -55 to +150 50 35 50 ER3B 100 70 100 ER3C 150 105 150 ER3D 200 140 200 3.0 ER3E 300 210 300 ER3G 400 280 400 ER3J 600 420 600 UNITS 100.0 1.25 1.70 A V µA µA ns pf °C/W °C DATE : SEP.25.2002 PAGE . 1 50W Noninductive 10W...