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2SA1762 - Silicon PNP epitaxial planer type Transistor

Key Features

  • q q 1.5 R0.9 R0.9 High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.4 1.0±0.1 R 0. 0.85 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature.
  • (Ta=25˚C) Ratings.
  • 80.
  • 80.
  • 5.
  • 1.
  • 0.5 1 150.
  • 55 ~ +.

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Datasheet Details

Part number 2SA1762
Manufacturer Panasonic
File Size 48.30 KB
Description Silicon PNP epitaxial planer type Transistor
Datasheet download datasheet 2SA1762 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistor 2SA1762 Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SC4606 6.9±0.1 1.5 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 Unit: mm s Features q q 1.5 R0.9 R0.9 High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.4 1.0±0.1 R 0. 0.85 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25˚C) Ratings –80 –80 –5 –1 – 0.5 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter 3 0.55±0.1 1.25±0.05 0.45±0.05 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg 2 1 2.5 2.