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2SA1858 - Silicon PNP epitaxial planer type Transistor

Key Features

  • 0.45.
  • 0.1 +0.15 2.3±0.2 W ˚C ˚C 2.54±0.15 1:Emitter 2:Collector 3:Base TO.
  • 92NL Package s Electrical Characteristics Parameter Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol VCEO VEBO hFE.
  • VCE(sat) fT Cob Conditions IC =.
  • 100µA, IB = 0 IE =.
  • 1µA, IC = 0 VCE =.
  • 10V, IC =.
  • 5mA IC =.
  • 10mA, I.

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Datasheet Details

Part number 2SA1858
Manufacturer Panasonic
File Size 36.51 KB
Description Silicon PNP epitaxial planer type Transistor
Datasheet download datasheet 2SA1858 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistor 2SA1858 Silicon PNP epitaxial planer type For general amplification 5.0±0.2 4.0±0.2 Unit: mm q High collector to emitter voltage VCEO. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –300 –300 –5 –100 –70 1 150 –55 ~ +150 Unit V V V mA mA 1 2 3 1.27 0.45 –0.1 1.27 +0.15 13.5±0.5 0.7±0.1 0.7±0.2 8.0±0.2 s Features 0.45 –0.1 +0.15 2.3±0.2 W ˚C ˚C 2.54±0.