2SA921 - Silicon PNP epitaxial planer type Transistor
Panasonic
Key Features
q q
High collector to emitter voltage VCEO. Low noise voltage NV. (Ta=25˚C)
Ratings.
120.
120.
5.
50.
20 250 150.
55 ~ +150 Unit V V V mA mA mW ˚C ˚C
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
13.5±0.5
0.45.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Transistor
2SA921
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification Complementary to 2SC1980
5.1±0.2
Unit: mm
5.0±0.2 4.0±0.2
s Features
q q
High collector to emitter voltage VCEO. Low noise voltage NV. (Ta=25˚C)
Ratings –120 –120 –5 –50 –20 250 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
13.5±0.5
0.45 –0.1 1.27
+0.2
0.45 –0.1
1.27
+0.2
1 2 3
2.3±0.2
2.54±0.
2SA921 Datasheet
