2SB0709A
2SB0709A is Silicon PNP epitaxial planar type Transistor manufactured by Panasonic.
Features
- High forward current transfer ratio h FE
- Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
Unit: mm
0.40+0.10
- 0.05 3
1.50+0.25
- 0.05 2.8+0.2
- 0.3
0.16+0.10
- 0.06
(0.65)
(0.95) (0.95) 1.9±0.1 2.90+0.20
- 0.05 10˚
- Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating
- 45
- 45
- 7
- 100
- 200 200 150
- 55 to +150 Unit V V V m A m A m W °C °C
1.1+0.2
- 0.1
1.1+0.3
- 0.1
1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package
Marking Symbol: B
- Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio
- Collector-emitter saturation voltage Transition frequency Collector output capacitance (mon base, input open circuited) Symbol VCBO VCEO VEBO ICBO ICEO h FE VCE(sat) f T Cob Conditions IC =
- 10 µA, IE = 0 IC =
- 2 m A, IB = 0 IE =
- 10 µA, IC = 0 VCB =
- 20 V, IE = 0 VCE =
- 10 V, IB = 0 VCE =
- 10 V, IC =
- 2 m A IC...
