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2SB0950 - Power Transistors

Features

  • High forward current transfer ratio hFE.
  • High-speed switching.
  • Full-pack package which can be installed to the heat sink with one screw 16.7±0.3 10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2 7.5±0.2 φ 3.1±0.1 Parameter Collector-base voltage (Emitter open) 2SB0950 2SB0950A Symbol VCBO VCEO VEBO IC ICP PC Ta = 25°C Tj Tstg Rating.
  • 60.
  • 80.
  • 60.
  • 80.
  • 5.
  • 4.
  • 8 40 2 150.
  • 55 to +150 Unit V Solder Dip (4.0).
  • Abs.

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Full PDF Text Transcription

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Power Transistors 2SB0950 (2SB950), 2SB0950A (2SB950A) www.DataSheet4U.net Silicon PNP epitaxial planar type darlington Unit: mm 0.7±0.1 For power amplification and switching Complementary to 2SD1276 and 2SD1276A ■ Features • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 16.7±0.3 10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2 7.5±0.2 φ 3.1±0.1 Parameter Collector-base voltage (Emitter open) 2SB0950 2SB0950A Symbol VCBO VCEO VEBO IC ICP PC Ta = 25°C Tj Tstg Rating −60 −80 −60 −80 −5 −4 −8 40 2 150 −55 to +150 Unit V Solder Dip (4.0) ■ Absolute Maximum Ratings TC = 25°C 14.0±0.5 4.2±0.2 1.4±0.1 1.3±0.2 0.5+0.2 –0.1 0.8±0.1 2.54±0.
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