Datasheet4U Logo Datasheet4U.com

2SB1050 - PNP Transistor

Key Features

  • q q q 1.5 R0.9 R0.9 0.4 2.4±0.2 2.0±0.2 3.5±0.1 0.85 (Ta=25˚C) Ratings.
  • 30.
  • 20.
  • 7.
  • 8.
  • 5 1 150.
  • 55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter 2.5 2.5 3 2 1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature.
  • Symbol VCBO VCEO VEBO ICP IC PC.
  • Tj Tstg EIAJ:SC.
  • 71.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SB1051K Epitaxial Planer PNP Silicon Transistor Rohm
2SB1052 SILICON POWER TRANSISTOR SavantIC
2SB1052 PNP Transistor INCHANGE
2SB1054 PNP Transistor INCHANGE
2SB1054 SILICON POWER TRANSISTOR SavantIC

Other Datasheets by Panasonic

Part Number Description
2SB1054 Silicon PNP Transistor
2SB1011 Silicon PNP triple diffusion planar type Transistor
2SB1030 Silicon PNP Transistor
2SB1030A Silicon PNP epitaxial planer type Transistor
2SB1036 PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Transistor 2SB1050 Silicon PNP epitaxial planer type For low-frequency amplification Unit: mm 6.9±0.1 1.5 2.5±0.1 1.0 s Features q q q 1.5 R0.9 R0.9 0.4 2.4±0.2 2.0±0.2 3.5±0.1 0.85 (Ta=25˚C) Ratings –30 –20 –7 –8 –5 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter 2.5 2.5 3 2 1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg EIAJ:SC–71 M Type Mold Package Printed circuit board: Copper foil area of thickness of 1.