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2SB1148A - PNP Transistor

Key Features

  • q q q Low collector to emitter saturation voltage VCE(sat) High-speed switching I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings.
  • 40.
  • 50.
  • 20.
  • 40.
  • 7.
  • 20.
  • 10 15 1.3 150.
  • 55 to +150 Unit V 7.2±0.3 0.8±0.2 1.1±0.1 0.85±0.1 0.4±0.1 1.0±0.2 10.0.
  • 0. +0.3 0.75±0.1 2.3±0.2 4.6±0.4 1 2 3 s Absolute Maximum Ratings Parameter Col.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors 2SB1148, 2SB1148A Silicon PNP epitaxial planar type For low-voltage switching Complementary to 2SD1752 and 2SD1752A 7.0±0.3 3.0±0.2 3.5±0.2 Unit: mm s Features q q q Low collector to emitter saturation voltage VCE(sat) High-speed switching I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings –40 –50 –20 –40 –7 –20 –10 15 1.3 150 –55 to +150 Unit V 7.2±0.3 0.8±0.2 1.1±0.1 0.85±0.1 0.4±0.1 1.0±0.2 10.0 –0. +0.3 0.75±0.1 2.3±0.2 4.6±0.4 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1148 2SB1148A 2SB1148 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Collector 3:Emitter I Type Package 3.5±0.2 2.0±0.2 7.0±0.3 Unit: mm 0 to 0.