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2SB1288 - Silicon PNP epitaxial planer type Transistor

Datasheet Summary

Features

  • q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings.
  • 30.
  • 20.
  • 7.
  • 10.
  • 5 1 150.
  • 55 ~ +150 Unit V V V A A W ˚C ˚C 1 2 3 2.54±0.15 1.27 0.45.
  • 0.1 1.27 +0.15 13.5±0.5 Low collector to emitter saturation volta.

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Datasheet Details

Part number 2SB1288
Manufacturer Panasonic Semiconductor
File Size 37.63 KB
Description Silicon PNP epitaxial planer type Transistor
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Full PDF Text Transcription

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Transistor 2SB1288 Silicon PNP epitaxial planer type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 5.0±0.2 4.0±0.2 s Features q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –30 –20 –7 –10 –5 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 1 2 3 2.54±0.15 1.27 0.45 –0.1 1.27 +0.15 13.5±0.5 Low collector to emitter saturation voltage VCE(sat). Large collector current IC. Allowing supply with the radial taping. 0.7±0.1 0.7±0.2 8.0±0.2 0.45 –0.1 +0.15 2.3±0.
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