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2SB1297 - Silicon PNP Transistor

Datasheet Summary

Features

  • 0.45.
  • 0.1 +0.15 2.3±0.2 1:Emitter 2:Collector 3:Base TO.
  • 92NL Package s Electrical Characteristics Parameter Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol VCEO VEBO hFE1.
  • 1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions IC =.
  • 0.1mA, IB = 0 IE =.
  • 10µA, IC = 0 VCE =.
  • 10V, IC =.

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Datasheet Details

Part number 2SB1297
Manufacturer Panasonic Semiconductor
File Size 37.86 KB
Description Silicon PNP Transistor
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Full PDF Text Transcription

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Transistor 2SB1297 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD1937 Unit: mm 5.0±0.2 4.0±0.2 q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –120 –120 –5 –1 – 0.5 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 1 2 3 2.54±0.15 1.27 0.45 –0.1 1.27 +0.15 13.5±0.5 Extremely satisfactory linearity of the forward current transfer ratio hFE. High transition frequency fT. Makes up a complementary pair with 2SD1937, which is optimum for the pre-driver stage of a 40 to 60W output amplifier. 0.7±0.1 0.7±0.2 8.
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