q q q q
Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi audio amplifier (TC=25˚C)
Ratings.
160.
160.
5.
20.
12 120 3.5 150.
55 to +150 Unit V V V A
26.0±0.5
10.0
1.5
2.0
4.0
1.5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base volt.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Power Transistors
2SB1347
Silicon PNP triple diffusion planar type
For high power amplification Complementary to 2SD2029
20.0±0.5
Unit: mm
φ 3.3±0.2 5.0±0.3 3.0
6.0
s Features
q q q q
Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi audio amplifier (TC=25˚C)
Ratings –160 –160 –5 –20 –12 120 3.5 150 –55 to +150 Unit V V V A
26.0±0.5
10.0
1.5
2.0
4.0
1.
2SB1347 Datasheet
