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2SB1417 - Silicon PNP epitaxial planar type Transistor

Key Features

  • q q q Parameter Collector to base voltage Collector to 2SB1417 2SB1417A 2SB1417 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings.
  • 60.
  • 80.
  • 60.
  • 80.
  • 6.
  • 5.
  • 3 15 2.0 150.
  • 55 to +150 Unit V 2.5±0.2 s Absolute Maximum Ratings 13.0±0.2 4.2±0.2 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing automatic insertion with radial taping (TC=25˚C) 5.0±0.1.

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Datasheet Details

Part number 2SB1417
Manufacturer Panasonic
File Size 55.11 KB
Description Silicon PNP epitaxial planar type Transistor
Datasheet download datasheet 2SB1417 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors 2SB1417, 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137 and 2SD2137A Unit: mm s Features q q q Parameter Collector to base voltage Collector to 2SB1417 2SB1417A 2SB1417 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –60 –80 –60 –80 –6 –5 –3 15 2.0 150 –55 to +150 Unit V 2.5±0.2 s Absolute Maximum Ratings 13.0±0.2 4.2±0.2 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing automatic insertion with radial taping (TC=25˚C) 5.0±0.1 10.0±0.2 1.0 90° 1.2±0.1 C1.0 2.25±0.2 18.0±0.5 Solder Dip 0.35±0.1 0.65±0.1 1.05±0.1 0.55±0.