2SB1446 - Silicon PNP epitaxial planer type Transistor
Panasonic
Key Features
q q
0.65 max. 1.0 1.0
Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature.
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Transistor
2SB1446
Silicon PNP epitaxial planer type
For low-frequency output amplification Complementary to 2SD2179
6.9±0.1
0.15
Unit: mm
1.05 2.5±0.1 ±0.05 (1.45) 0.8
0.5 4.5±0.1 0.45–0.05 2.5±0.1
0.7
4.0
s Features
q q
0.65 max.
1.0 1.0
Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping.
0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
(Ta=25˚C)
Ratings –50 –50 –5 –7 –5 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C
0.45–0.05
+0.1
+0.1
2.5±0.5
2.5±0.
2SB1446 Datasheet
