2SB1606
2SB1606 is Silicon PNP Transistor manufactured by Panasonic.
Features q q q q
φ3.2±0.1
9.9±0.3
2.9±0.2
4.1±0.2 8.0±0.2 Solder Dip
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio h FE Large collector current IC Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (Ta=25˚C)
Ratings
- 130
- 80
- 7
- 10
- 5 40 2 150
- 55 to +150 Unit V V V A A W ˚C ˚C
15.0±0.3
3.0±0.2 s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
13.7- 0.2
+0.5
1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4
2.6±0.1 0.7±0.1
7°
1 2 3
1:Base 2:Collector 3:Emitter TO- 220E Full Pack Package s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
- h
(Ta=25˚C)
Symbol ICBO IEBO VCEO h FE1 h FE2- VCE(sat) VBE(sat) f T ton tstg tf IC =
- 2A, IB1 =
- 0.2A, IB2 = 0.2A Conditions VCB =
- 100V, IE = 0 VEB =
- 5V, IC = 0 IC =
- 10m A, IB = 0 VCE =
- 2V, IC =
- 0.1A VCE =
- 2V, IC =
- 2A IC =
- 4A, IB =
- 0.2A IC =
- 4A, IB =
- 0.2A VCE...
