The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Power Transistors
2SB1629
Silicon PNP epitaxial planar type
For power amplification
Unit: mm
4.6±0.2
s Features
q q q
φ3.2±0.1
9.9±0.3
2.9±0.2
4.1±0.2 8.0±0.2 Solder Dip
High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C)
Ratings –60 –60 –6 –6 –3 –1 40 2 150 –55 to +150 Unit V V V A A A W ˚C ˚C
15.0±0.3
3.0±0.2
13.7–0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg
+0.5
1.
2SB1629 Datasheet
