13.0±0.2 4.2±0.2
5.0±0.1 10.0±0.2 1.0
q q q
2.5±0.2
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing automatic insertion with radial taping (TC=25˚C)
Ratings.
60.
60.
6.
6.
3.
1 15 2 150.
55 to +150 Unit V V V A A A W ˚C ˚C
90°
1.2±0.1
18.0±0.5 Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Em.
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Power Transistors
2SB1631
Silicon PNP epitaxial planar type
For power amplification
Unit: mm
s Features
13.0±0.2 4.2±0.2
5.0±0.1 10.0±0.2 1.0
q q q
2.5±0.2
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing automatic insertion with radial taping (TC=25˚C)
Ratings –60 –60 –6 –6 –3 –1 15 2 150 –55 to +150 Unit V V V A A A W ˚C ˚C
90°
1.2±0.1
18.0±0.5 Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg
C1.0 2.25±0.2
0.35±0.1
0.65±0.1 1.05±0.1 0.
2SB1631 Datasheet
