Datasheet4U Logo Datasheet4U.com

2SB1643 - Silicon PNP Transistor

Key Features

  • q q q 1.5max. 1.1max. High collector to emitter VCEO High collector power dissipation PC N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings.
  • 60.
  • 60.
  • 6.
  • 6.
  • 3.
  • 1 40 1.3 150.
  • 55 to +150 Unit V V 10.5min. 2.0 0.8±0.1 0.5max. 2.54±0.3 5.08±0.5 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emi.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SB1643 Silicon PNP epitaxial planar type Transistor Kexin
2SB1640 Silicon PNP Transistor Toshiba Semiconductor
2SB1640 PNP Transistor INCHANGE
2SB1640 SILICON POWER TRANSISTOR SavantIC
2SB1641 Silicon PNP Epitaxial Transistor Toshiba

Other Datasheets by Panasonic

Part Number Description
2SB1645 Silicon PNP Transistor
2SB1603 Silicon PNP Transistor
2SB1603A Silicon PNP Transistor
2SB1604 Silicon PNP Transistor
2SB1604A Silicon PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Power Transistors 2SB1643 Silicon PNP epitaxial planar type For power amplification 10.0±0.3 1.5±0.1 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q q 1.5max. 1.1max. High collector to emitter VCEO High collector power dissipation PC N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings –60 –60 –6 –6 –3 –1 40 1.3 150 –55 to +150 Unit V V 10.5min. 2.0 0.8±0.1 0.5max. 2.54±0.3 5.08±0.