2SB1699 Overview
Transistors 2SB1699 Silicon PNP epitaxial planar type Unit: mm For power amplification.
2SB1699 Key Features
- Low collector-emitter saturation voltage VCE(sat)
- Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the m
- Junction temperature Storage temperature
- Electrical Characteristics Ta = 25°C ± 3°C
- Symbol VCEO ICBO ICEO hFE1 hFE2 hFE3 Collector-emitter saturation voltage
- 0.5 V µs µs µs MHz Min -60 -100 -100 250 Typ Max Unit V µA µA