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2SB1699 - Silicon PNP Transistor

Key Features

  • s.
  • Low collector-emitter saturation voltage VCE(sat).
  • Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 4.5±0.1 1.6±0.2 1.5±0.1 4.0+0.25.
  • 0.20 2.5±0.1 3˚ 0.4±0.04 0.4±0.08 1.5±0.1 3˚ Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation.

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Transistors 2SB1699 Silicon PNP epitaxial planar type Unit: mm For power amplification ■ Features • Low collector-emitter saturation voltage VCE(sat) • Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 4.5±0.1 1.6±0.2 1.5±0.1 4.0+0.25 –0.20 2.5±0.1 3˚ 0.4±0.04 0.4±0.08 1.5±0.1 3˚ Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −60 −60 −6 −2 −4 1 150 −55 to +150 Unit V V V A A W °C °C 3.0±0.