2SB1699 Datasheet PDF - Panasonic Semiconductor Silicon PNP Transistor Specs

2SB1699 - Silicon PNP Transistor

Datasheet Summary

Features

s.
Low collector-emitter saturation voltage VCE(sat).
Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 4.5±0.1 1.6±0.2 1.5±0.1 4.0+0.25.
0.20 2.5±0.1 3˚ 0.4±0.04 0.4±0.08 1.5±0.1 3˚ Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation.

Datasheet Details

Part number	2SB1699
Manufacturer	Panasonic Semiconductor
File Size	83.46 KB
Description	Silicon PNP Transistor
Datasheet	2SB1699 Datasheet
Additional preview pages of the 2SB1699 datasheet.

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Full PDF Text Transcription

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Transistors 2SB1699 Silicon PNP epitaxial planar type Unit: mm For power amplification ■ Features • Low collector-emitter saturation voltage VCE(sat) • Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 4.5±0.1 1.6±0.2 1.5±0.1 4.0+0.25 –0.20 2.5±0.1 3˚ 0.4±0.04 0.4±0.08 1.5±0.1 3˚ Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −60 −60 −6 −2 −4 1 150 −55 to +150 Unit V V V A A W °C °C 3.0±0.

Published: Sep 23, 2005 |