2SB642 - Silicon PNP epitaxial planer type Transistor
Panasonic
Key Features
q q
1.5
0.4
1.5 R0.9 R0.9
High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0±0.1
R
0.
0.85
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
Ratings.
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Transistor
2SB642
Silicon PNP epitaxial planer type
For low-power general amplification
Unit: mm
6.9±0.1 2.5±0.1 1.0
1.0 2.4±0.2 2.0±0.2 3.5±0.1
s Features
q q
1.5
0.4
1.5 R0.9 R0.9
High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
1.0±0.1
R
0.
0.85
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
Ratings –60 –50 –7 –200 –100 400 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C
1:Base 2:Collector 3:Emitter
3
0.55±0.1
1.25±0.05
0.45±0.05
2
1
2.5
2.
2SB642 Datasheet
