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2SB710 - Silicon PNP Transistor

Key Features

  • s.
  • Large collector current IC.
  • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing Unit: mm 0.40+0.10.
  • 0.05 3 1.50+0.25.
  • 0.05 2.8+0.2.
  • 0.3 0.16+0.10.
  • 0.06 1 2 (0.65).
  • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SB0710 2SB0710A VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating.
  • 30.
  • 60.
  • 25.
  • 50.

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Datasheet Details

Part number 2SB710
Manufacturer Panasonic
File Size 85.62 KB
Description Silicon PNP Transistor
Datasheet download datasheet 2SB710 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistors 2SB0710 (2SB710), 2SB0710A (2SB710A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A) ■ Features • Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing Unit: mm 0.40+0.10 –0.05 3 1.50+0.25 –0.05 2.8+0.2 –0.3 0.16+0.10 –0.06 1 2 (0.65) ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SB0710 2SB0710A VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating −30 −60 −25 −50 −5 − 0.5 −1 200 150 −55 to +150 V A A mW °C °C V Unit V 10˚ (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 1.1+0.2 –0.1 Collector-emitter voltage 2SB0710 (Base open) 2SB0710A 1.1+0.3 –0.