q High foward current transfer ratio hFE. q High collector to emitter voltage VCEO. s Absolute Maximum Ratings (Ta=25˚C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Ratings.
80.
80.
5.
100 250 150.
55 ~ +150
Unit V V V mA mW ˚C ˚C
13.5±0.5
5.1±0.2
5.0±0.2
Unit: mm 4.0±0.2
+0.2
0.45.
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Transistor
2SB726
Silicon PNP epitaxial planer type
For general amplification
s Features
q High foward current transfer ratio hFE. q High collector to emitter voltage VCEO.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Ratings –80 –80 –5 –100 250 150
–55 ~ +150
Unit V V V mA mW ˚C ˚C
13.5±0.5
5.1±0.2
5.0±0.2
Unit: mm 4.0±0.2
+0.2
0.45 –0.1 1.27
+0.2
0.45 –0.1 1.27
2.3±0.2
123 2.54±0.
2SB726 Datasheet
