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2SB792 - Silicon PNP Transistor

Key Features

  • q q q 0.65±0.15 +0.25 1.5.
  • 0.05 0.65±0.15 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB792 2SB792A 2SB792 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2 (Ta=25˚C) +0.2 1.1.
  • 0.1.
  • 150.
  • 185.
  • 150.
  • 185.
  • 5.
  • 100.
  • 50 200 150.
  • 55 ~ +150 emitter voltage 2SB792A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperatu.

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Datasheet Details

Part number 2SB792
Manufacturer Panasonic
File Size 37.53 KB
Description Silicon PNP Transistor
Datasheet download datasheet 2SB792 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistor 2SB792, 2SB792A Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD814 2.8 –0.3 +0.2 Unit: mm s Features q q q 0.65±0.15 +0.25 1.5 –0.05 0.65±0.15 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB792 2SB792A 2SB792 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2 (Ta=25˚C) +0.2 1.1 –0.