The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Transistor
2SB792, 2SB792A
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification Complementary to 2SD814
2.8 –0.3
+0.2
Unit: mm
s Features
q q q
0.65±0.15
+0.25 1.5 –0.05
0.65±0.15
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB792 2SB792A 2SB792 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
2
(Ta=25˚C)
+0.2 1.1 –0.