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2SB819 - Silicon PNP Transistor

Datasheet Summary

Features

  • q q q 1.5 R0.9 R0.9 0.85 0.55±0.1 0.45±0.05 1.25±0.05 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature.
  • (Ta=25˚C) Ratings.
  • 50.
  • 40.
  • 5.
  • 3.
  • 1.5 1 150.
  • 55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter 2.5 2.5 3 2 1 Symbol VCBO VCEO VEBO ICP IC PC.

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Datasheet Details

Part number 2SB819
Manufacturer Panasonic Semiconductor
File Size 47.39 KB
Description Silicon PNP Transistor
Datasheet download datasheet 2SB819 Datasheet
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Full PDF Text Transcription

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Transistor 2SB819 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD1051 6.9±0.1 1.5 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 Unit: mm s Features q q q 1.5 R0.9 R0.9 0.85 0.55±0.1 0.45±0.05 1.25±0.05 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25˚C) Ratings –50 –40 –5 –3 –1.5 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter 2.5 2.5 3 2 1 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg EIAJ:SC–71 M Type Mold Package Printed circuit board: Copper foil area of thickness of 1.
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