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2SB933 - Power Transistors

Download the 2SB933 datasheet PDF. This datasheet also covers the 2SB0933 variant, as both devices belong to the same power transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • s.
  • Low collector-emitter saturation voltage VCE(sat).
  • Satisfactory linearity of forward current transfer ratio hFE.
  • Large collector current IC.
  • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.0±0.3 1.5±0.1 Unit : mm 8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1 4.4±0.5.
  • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base o.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SB0933_PanasonicSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Power Transistors 2SB0933 (2SB933) www.DataSheet4U.net Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1256 ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.0±0.3 1.5±0.1 Unit : mm 8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1 4.4±0.