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2SB936 - PNP Transistor

Key Features

  • q q q Low collector to emitter saturation voltage VCE(sat) High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 1.5±0.1 1.5max. 1.1max. 10.5min. 2.0 0.8±0.1 0.5max. s 2.54±0.3 Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings.
  • 40.
  • 50.
  • 20.
  • 40.
  • 5.
  • 20.
  • 10 40 1.3 150.
  • 55 to +150 Unit V 2SB.

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Power Transistors 2SB936, 2SB936A Silicon PNP epitaxial planar type For low-voltage switching 10.0±0.3 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 s Features q q q Low collector to emitter saturation voltage VCE(sat) High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 1.5±0.1 1.5max. 1.1max. 10.5min. 2.0 0.8±0.1 0.5max. s 2.54±0.3 Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –40 –50 –20 –40 –5 –20 –10 40 1.3 150 –55 to +150 Unit V 2SB936 2SB936A 2SB936 5.08±0.5 1 2 3 Collector to base voltage Collector to 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.4±0.3 1.0±0.1 8.5±0.2 6.0±0.