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Power Transistors
2SB954, 2SB954A
Silicon PNP epitaxial planar type
For power amplification
s Features
q q q
Unit: mm
0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2
s
Absolute Maximum Ratings (TC=25˚C)
Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –60 –80 –60 –80 –5 –2 –1 30 2 150 –55 to +150 Unit V 2SB954 2SB954A 2SB954
14.0±0.5
base voltage Collector to
emitter voltage 2SB954A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A A W ˚C ˚C
Solder Dip
4.0
Collector to
16.7±0.3
7.5±0.
2SB954A Datasheet
