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2SB954A - PNP Transistor

Key Features

  • q q q Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2.
  • 0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings.
  • 60.
  • 80.
  • 60.
  • 80.
  • 5.
  • 2.
  • 1 30 2 150.
  • 55 to +150 Unit V 2SB954 2SB954A 2SB954 14.0±0.5 base voltage Collector to emitter voltage 2SB954A Emitter to base voltage Peak collector current Collector.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors 2SB954, 2SB954A Silicon PNP epitaxial planar type For power amplification s Features q q q Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –60 –80 –60 –80 –5 –2 –1 30 2 150 –55 to +150 Unit V 2SB954 2SB954A 2SB954 14.0±0.5 base voltage Collector to emitter voltage 2SB954A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C Solder Dip 4.0 Collector to 16.7±0.3 7.5±0.